smd type ic smd type sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1gate 2drain 3 source 4drain BSP613P features p-channel enhancement mode avalanche rated dv/dt rated ideal for fast switching buck converter absolute maximum ratings ta = 25 parameter symbol rating unit continuous drain current t a =25 i d -2.9 a pulsed drain current t a =25 i dp -11.6 a avalanche energy, single pulse *1 e as 150 mj avalanche energy, periodic limited by tjmax e ar 0.18 mj reverse diode dv /dt *2 d v /d t 6 kv/ s gate source voltage v gs 20 v power dissipation p d 1.8 w operating and storage temperature t j ,t stg -55 to +150 thermal resistance,junction - soldering point r thjs 19 k/w operating and storage temperature t j ,t stg -55 to 150 *1 i d =-2.9a,v ds =-25 v, r gs =25 *2 i s =2.9a, v ds =-48 v,d i /d t =-200 a/ s,t j,max =150 m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 6 http://www.twtysemi.com
smd type ic smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss v gs =0 v, i d =-250 a -60 v v ds =-60v, v gs =0v,t j =25 -0.1 -1 v ds =-60 v, v gs =0 v,t j =125 -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v -10 -100 na gate threshold voltage v gs(th) v ds =v gs ,i d =-1ma -2.1 -3 -4 v drain-source on-state resistance r ds(on) v gs =-10v, i d =2.9a 0.11 0.13 forward transconductance g fs |v ds |>2|i d |r ds(on)max ,i d =2.9 a 2.7 5.4 s input capacitance c iss 715 875 output capacitance c oss 230 295 reverse transfer capacitance c rss 90 120 turn-on delay time t d(on) 6.7 17 rise time t r 918 turn-off delay time t d(off) 26 52 fall time t f 719 gate to source charge q gs 2.5 3.8 gate to drain charge q gd 8.9 14.3 gate charge total q g v dd =-48v, i d =2.9a,v gs =0 to -10v 22 33 gate plateau voltage v(plateau) v dd =-48v, i d =2.9a -3.9 v reverse recovery time trr 37.2 79 ns reverse recovery charge q rr 59.8 112 nc diode continous forward current i s -2.9 a diode pulse curret i sm -11.6 a diode forward voltage v sd v gs =0v, |i f |=|i s | -0.88 -1.1 v v r =-30v, |i f |=|i s |, d if /d t =100a/ s a v gs =0v, v ds =-25v,f =1 mhz v dd =-30 v,v gs =-10 v,i d =-2.9a, r g =2.7 pf ns v dd =-48v, i d =2.9a nc i dss zero gate voltage drain current t a =25 m o s f e t smd type ic smd type BSP613P m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 6 http://www.twtysemi.com
smd type smd type 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 p tot 2 drain current i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.4 0.8 1.2 1.6 2 2.4 a 3.2 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d r ds(on) = v ds / i d dc 10 ms 1 ms t p = 100.0 4 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 m o s f e t smd type ic smd type BSP613P m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 3 of 6 http://www.twtysemi.com
smd type ic smd type 5 typ. output characteristic i d = f ( v ds ) parameter: t j =25c 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 -vds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 a 7 -i d vgs=3.5v vgs = 4v vgs = 4.5v vgs = 5v vgs = 6v vgs = 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs ; t j = 25 c 0 1 2 3 4 a 6 -i d 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 w 0.5 r ds(on) vgs = 4v vgs = 4,5v vgs = 5v vgs = 6v vgs = 10v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 3 2 x | i d | x r ds(on)max parameter: t j = 25 c 0 1 2 3 4 5 v 7 -v gs 0 1 2 3 4 5 6 a 8 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 1 2 3 4 5 6 7 8 a 10 -i d 0 1 2 3 4 5 6 s 8 g fs m o s f e t smd type ic smd type BSP613P m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 4 of 6 http://www.twtysemi.com
smd type ic smd type 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -2.9 a, v gs = -10 v -60 -20 20 60 100 c 180 t j 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 w 0.34 BSP613P r ds(on) typ 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -1 ma -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 2% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 98% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -1 -10 0 -10 1 -10 2 -10 a BSP613P i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) m o s f e t smd type ic smd type BSP613P m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 5 of 6 http://www.twtysemi.com
smd type ic smd type 13 typ. avalanche energy e as = f ( t j ) par.: i d = 2.9 a , v dd = -25 v, r gs = 25 w 25 45 65 85 105 125 oc 165 t j 0 20 40 60 80 100 120 mj 160 e as 14 typ. gate charge v gs = f ( q g ), parameter: v ds ; t j = 25 c i d = 2.9 a pulsed; 0 4 8 12 16 20 24 28 nc 34 |q g | 0 2 4 6 8 10 12 v 16 BSP613P v gs 0.2 v ds max 0.8 v ds max 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 v (br)dss m o s f e t smd type ic smd type m o s f e t smd type ic smd type BSP613P m o s f e t s m d t y p e i c s m d t y p e m o s f e t smd t ype ic smd t ype mosfet d i p ty p e m o s f e t smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 6 of 6 http://www.twtysemi.com
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